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| inchange semiconductor product specification silicon npn power transistors 2n6753 2N6754 description with to-3 package high breakdown voltage low saturation voltage fast switching speed applications off-line power supplies high-voltage inverters switching regulators pinning pin description 1 base 2 emitter 3 collector absolute maximum ratings(ta= ) symbol parameter conditions value unit 2n6753 900 v cbo collector-base voltage 2N6754 open emitter 1000 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 8 v i c collector current 10 a i b base current 5 a p d total power dissipation t c =25 150 w t j junction temperature -65~175 t stg storage temperature -65~200 thermal characteristics symbol parameter value unit r th j-c thermal resistance junction to case 1.0 /w fig.1 simplified outline (to-3) and symbol
inchange semiconductor product specification 2 silicon npn power transistors 2n6753 2N6754 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a ;i b =0 500 v v cesat-1 collector-emitter saturation voltage i c =5a; i b =1a 1.0 v v cesat-2 collector-emitter saturation voltage i c =10a; i b =3a 3.0 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.3 v 2n6753 v ce =900v; v be =-1.5v t c =100 0.1 1.0 i cev collector cut-off current 2N6754 v ce =1000v; v be =-1.5v t c =100 0.1 1.0 ma i ebo emitter cut-off current v eb =8v; i c =0 2.0 ma h fe dc current gain i c =5a ; v ce =3v 8 40 c ob output capacitance i e =0 ; v cb =10v;f=0.1mhz 50 250 pf f t transition frequency i c =0.2a ; v ce =10v 15 60 mhz inchange semiconductor product specification 3 silicon npn power transistors 2n6753 2N6754 package outline fig.2 outline dimensions (unindicated tolerance: 0.10mm) |
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